Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS
| Autor: | J.M. Hartmann, E. Saracco, J.F. Damlencourt, J.M. Fabbri, M. Py, Jean-Paul Barnes |
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| Rok vydání: | 2011 |
| Předmět: |
Fabrication
Materials science Silicon dioxide business.industry Analytical chemistry Nanowire General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Characterization (materials science) Silicon-germanium Matrix (chemical analysis) chemistry.chemical_compound chemistry Impurity Optoelectronics Thin film business |
| Zdroj: | Applied Surface Science. 257:9414-9419 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2011.06.021 |
| Popis: | The abundance of work on SiGe based devices demonstrates the importance of compositional characterization of such materials. However accurate SIMS depth profiling of SiGe, and especially of SiGe/silicon dioxide interfaces can be difficult due to matrix effects. Therefore, we highlight here the improvements brought by the extended Full Spectrum protocol, presented in previous works and allowing minimization of matrix effects. Previous studies on this protocol showed that it was extremely precise and reproducible for Ge and impurity quantification in non oxidized matrices. In this study we thus investigated its accuracy for simultaneous quantitative depth profiling of both matrix elements (Si, Ge, O) and impurities (C) in Si 0.82 Ge 0.16 C 0.02 layers annealed in oxidizing atmosphere, by comparing results with more classic protocols. The profiles provided by the extended Full Spectrum protocol were found to be more accurate than the others, especially around interfaces. This results in a better comprehension of the behaviour of SiGeC layers under oxidizing anneal and thus allows the fabrication of very well controlled three dimensional Ge nanowire structures for next generation devices. |
| Databáze: | OpenAIRE |
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