Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire
| Autor: | Isamu Akasaki, Shinji Yasue, Motoaki Iwaya, Shunya Tanaka, Kazuki Yamada, Tomoya Omori, Yuya Ogino, Satoshi Kamiyama, Sho Iwayama, Hideto Miyake, Kosuke Sato, Tetsuya Takeuchi, Sayaka Ishizuka, Shohei Teramura |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Laser diode business.industry General Engineering General Physics and Astronomy 02 engineering and technology Electroluminescence 021001 nanoscience & nanotechnology Laser Cladding (fiber optics) Polarization (waves) medicine.disease_cause 01 natural sciences law.invention law Lattice (order) 0103 physical sciences Sapphire medicine Optoelectronics 0210 nano-technology business Ultraviolet |
| Zdroj: | Applied Physics Express. 13:031004 |
| ISSN: | 1882-0786 1882-0778 |
| Popis: | An AlGaN ultraviolet-B laser diode at 298 nm was realized at room temperature using pulse operation. The laser diode has a lattice-relaxed Al0.6Ga0.4N layer from the underlying AlN/sapphire template and a composition-graded p-AlGaN cladding layer. The multimodal laser spectrum with proper polarization properties at 298 nm was obtained over the threshold current at 0.90 A corresponding to 67 kA cm–2. By broadening the width of the p-electrode to 11.5 μm, the threshold current density decreased to 41 kA cm–2. |
| Databáze: | OpenAIRE |
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