Structural Studies of Nickel Films and their Interface with Sapphire Substrates

Autor:	S. Baik, Gene E. Ice, T. Habenschuss, D. S. Easton, Cullie J. Sparks, M. Hasaka
Rok vydání:	1986
Předmět:	Diffraction Materials science Analytical chemistry chemistry.chemical_element Corundum Chemical vapor deposition engineering.material Epitaxy Nickel Surface coating Crystallography chemistry X-ray crystallography engineering Sapphire
Zdroj:	MRS Proceedings. 77
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-77-495
Popis:	The perfection of epitaxial nickel films grown on the (00.ℓ) or basal plane of heated sapphire (A1203) single crystals were studied with X-ray diffraction techniques. Nickel films approximately 700 Å thick formed by vapor deposition increased in perfection as the temperature of the sapphire approached 1400°C. Although the nickel atom distances are 10.3% smaller than those of the closed-packed direction in sapphire, the strain was accommodated at the interface rather than being distributed through the thickness of the nickel film. Diffuse rods of X-ray scattering which are associated with diffraction from the interface gave information about the nature of the roughness at the interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4bf5646bd7a72613906f9a9ef8da2533 https://doi.org/10.1557/proc-77-495 Zobrazit plný text záznamu Full text from SpringerLink