Growth and Magneto-Transport of Gate Controlled n-Type HgTe/Hg0.3Cd0.7Te Quantum Wells with the Inclusion of Mn

Autor:	C. R. Becker, A. Pfeuffer-Jeschke, Hartmut Buhmann, Yongsheng Gui, K. Ortner, J. Liu, Laurens W. Molenkamp, V. Daumer, V. Hock
Rok vydání:	2002
Předmět:	education.field_of_study Condensed matter physics Magnetoresistance Chemistry Oscillation Doping Population Condensed Matter Physics Shubnikov–de Haas effect Electronic Optical and Magnetic Materials Ion education Quantum well Spin-½
Zdroj:	physica status solidi (b). 229:775-779
ISSN:	1521-3951 0370-1972
DOI:	10.1002/1521-3951(200201)229:2<775::aid-pssb775>3.0.co;2-w
Popis:	A series of gate controlled n-type asymmetrically modulation doped HgTe quantum wells (QWs) with Mn in one of the barriers have been investigated. From a Fourier analysis of the Shubnikovde Haas (SdH) oscillations, the population difference of the two spin split H1 subbands has been determined for three QWs with different spacer thicknesses between the quantum well and the Mn ions. This population difference shows a significant enhancement in the QW with a 5 nm spacer compared to the QWs with 10 and 15 nm thick spacers. The latter results agree with the predictions for Rashba spin-orbit splitting, however, we must assume that Mn in the QW with the thin spacer increases the asymmetry of the QW.
Databáze:	OpenAIRE
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