Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

Autor:	Matt D'Amore, Steven Taiyu Lin, Beckie Chan, P. C. Chang, Augusto Gutierrez-Aitken, E. Kaneshiro, K. Sato, Cedric Monier, Dennis W. Scott, Abdullah Cavus, Bert K. Oyama, Aaron K. Oki
Rok vydání:	2009
Předmět:	Materials science Semiconductor technology business.industry Heterojunction bipolar transistor Integrated circuit law.invention chemistry.chemical_compound chemistry law Indium phosphide Optoelectronics Aerospace systems business Aerospace Common emitter
Zdroj:	2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.
DOI:	10.1109/csics.2009.5315670
Popis:	Northrop Grumman Aerospace Systems (NGAS) has been developing InP-based heterojunction bipolar transistor technology for next generation high performance aerospace, defense and commercial applications. We present highlights and status of our production and advanced InP HBT technologies including ultra-high speed 0.25 micron emitter InP HBT.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4bf3787089b1a4031e4c8984849c19b7 https://doi.org/10.1109/csics.2009.5315670 Zobrazit plný text záznamu