A Numerical Technique for Removing Residual Gate-Source Capacitances When Extracting Parasitic Inductance for GaN High Electron Mobility Transistors (HEMTs)

Autor:	Pankaj B. Shah, B. Huebschman
Rok vydání:	2011
Předmět:	Engineering business.industry Transistor Integrated circuit Capacitance law.invention Small-signal model Inductance law Parasitic element Hardware_INTEGRATEDCIRCUITS Electronic engineering business Microwave Monolithic microwave integrated circuit
DOI:	10.21236/ada539647
Popis:	The design of monolithic microwave integrated circuits (MMIC) is dependent on the ability to generate accurate device models. Prior knowledge of the external parasitic components is required to determine the small signal model of the intrinsic device. A simple technique for determining and correcting for the gate-source capacitance during the extraction of the series inductance will be presented. This technique has worked well when integrated into existing small signal extraction procedures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4beff10d23063b091cdc579b857af55b https://doi.org/10.21236/ada539647 Zobrazit plný text záznamu