Erratum: Si-doping effect on solution-processed In-O thin-film transistors (2019 Mater. Res. Express 6 026410)

Autor:	Bui Nguyen Quoc Trinh, Toshihide Nabatame, Tatsuki Hori, Akihiko Fujiwara, Kazuhito Tsukagoshi, Takio Kizu, Ha Hoang, To-oru Yasuda
Rok vydání:	2018
Předmět:	Biomaterials Materials science Polymers and Plastics business.industry Thin-film transistor Doping Metals and Alloys Optoelectronics business Surfaces Coatings and Films Electronic Optical and Magnetic Materials Solution processed
Zdroj:	Materials Research Express. 6:039601
ISSN:	2053-1591
DOI:	10.1088/2053-1591/aaf570
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4be585af6a94f52a5f6052cad07dd9eb https://doi.org/10.1088/2053-1591/aaf570 Zobrazit plný text záznamu