Failure mechanism and improvement on gate oxide failure at the edge of LOCOS

Autor:	Tong Gee Hong, Wong Jian Sang, Michaelina Ong, Raymond Tan, Lesley Wong Ying Ying, Deb Kumar Pal, Ng Hong Seng
Rok vydání:	2012
Předmět:	Alternative methods chemistry.chemical_compound Materials science chemistry Gate oxide Annealing (metallurgy) Oxide Electronic engineering Time-dependent gate oxide breakdown Failure mechanism LOCOS Thickening Composite material
Zdroj:	2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
DOI:	10.1109/smelec.2012.6417214
Popis:	Gate oxide early breakdown was investigated. It was verified that the gate oxide quality is good and failure was due to extrinsic causes. The failure, which was localized at the edge of LOCOS was similar to Kooi effect. However, investigations showed that it was due to nitridation occured during high temperature nitrogen anneal. Investigation methods to find the root cause of failure were explained. Alternative methods to solve the failure were explored; including thickening the sacrificial oxide layer and changing the nitrogen anneal process sequence. Final solution was chosen based on PCM stress test, QBD and TDDB result with minimal process change.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4bd4dc81f829720c0cbf358ea19fb3c5 https://doi.org/10.1109/smelec.2012.6417214 Zobrazit plný text záznamu