Finding the Energy Gap of Ga1 –xInxAs p–n Junctions on a Metamorphic Buffer from the Photocurrent Spectrum
| Autor: | M. Z. Shvartz, V. V. Evstropov, S. A. Mintairov, N. A. Kalyuzhnyi, M. A. Mintairov |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Photocurrent Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Band gap Spectrum (functional analysis) 02 engineering and technology Electroluminescence 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Saturation current 0103 physical sciences Quantum efficiency 0210 nano-technology |
| Zdroj: | Technical Physics Letters. 46:332-334 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | A relationship has been established between the energy gap width of GaInAs p–n homojunctions and the saturation current. For this purpose, a method was suggested and substantiated for determining the energy gap width of a p–n junction from the spectrum of the photocurrent quantum efficiency. The method was applied to Ga1 –xInxAs p–n junctions grown by metal-organic vapor-phase epitaxy on metamorphic buffers. The difference between the energy gap width determined by using the suggested method and that found from the peak of the electroluminescence spectrum did not exceed 3 meV. It was found that the saturation current exponentially depends on the energy gap width, and this dependence is characterized by a current invariant. |
| Databáze: | OpenAIRE |
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