Effect of rapid thermal annealing on gate induced drain leakage in an‐channel metal‐oxide‐semiconductor field effect transistor

Autor:	M. S. Lin, N. S. Tsai, F. C. Tseng, C. W. Chen, Y.K. Fang, J. C. Hsieh
Rok vydání:	1993
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Annealing (metallurgy) viruses Semiconductor device biochemical phenomena metabolism and nutrition Avalanche breakdown Tunnel effect Semiconductor MOSFET Optoelectronics Field-effect transistor business Leakage (electronics)
Zdroj:	Applied Physics Letters. 63:3058-3059
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.110257
Popis:	Significant gate induced drain leakage caused by post‐oxide rapid thermal annealing (RTA) was studied in this letter in comparison with the non‐RTA process for n‐channel metal‐oxide‐ semiconductor field effect transistor. It is found that the sub‐breakdown leakage increases with increasing RTA temperature. We proposed that interface states and recombination centers generated after RTA are the dominant factors in the enhancement of the leakage current. In addition, it is found that RTA has no effect on the avalanche breakdown voltage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4bc22b2c5f47446644cc23498e107160 https://doi.org/10.1063/1.110257 Zobrazit plný text záznamu