n-Type doping of p-type mercury zinc telluride by ion implantation of boron
| Autor: | J. M. Centeno, T. Rodríguez, J. Sanz-Maudes, C. González |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
inorganic chemicals
Materials science Annealing (metallurgy) Mechanical Engineering Doping Inorganic chemistry chemistry.chemical_element Condensed Matter Physics BORO chemistry.chemical_compound Ion implantation chemistry Mechanics of Materials Hall effect Mercury zinc telluride General Materials Science Mercury cadmium telluride Boron Nuclear chemistry |
| Zdroj: | Materials Letters. 9:60-64 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/0167-577x(90)90152-c |
| Popis: | The electric effects of implantation of boron into p-type MZT (mercury zinc telluride) has been evaluated using Hall effect data. The data show that boron implantation, without damage annealing, produces an n-type layer in MZT. This behavior appears to be related to implantation damage as this also happens in other II–VI compounds, such as MCT (mercury cadmium telluride). In MZT, a freeze-out of majority carriers is observed in the implanted layer with a characteristic activation energy E A ≈ 10 meV. This effect has not been found in MCT. |
| Databáze: | OpenAIRE |
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