| Autor: |
I. P. Koziarskyi, D. P. Koziarskyi, Eduard V. Maistruk |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE 3rd Ukraine Conference on Electrical and Computer Engineering (UKRCON). |
| Popis: |
The photoelectrical properties of the p-Cu 2 O/n-CdTe heterostructure obtained on the basis of Cu2o thin films were investigated. In work also describes the Cu2o thin films growth conditions and its influence on the optical and electrical properties. By the method of RF magnetron sputtering Cu2o thin films were obtained. A target from copper oxide II powder was used. Films sputtered on glass and glass-ceramic substrates. Obtained P-Cu 2 O films were with: optical band gap - E g op= 2.6 eV, specific resistance - p = 0.5 Ω× cm. Investigation of the I-V-characteristics of p-Cu 2 O/n-CdTe heterostructures showed that the heterostructures have a pronounced rectifying effect with a rectification coefficient RR ~ 240 at a voltage of 3 V, the potential barrier height eφ k = 2.1 e V at T = 300 K. The series resistance of the heterostructures reaches R s ~ 6.4 Ω at room temperature and is formed by the n-CdTe substrates and decreases with the light irradiation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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