Preparation, characterization and application of RF sputter deposited boron doped silicon dioxide thin films

Autor:	Ruchi Tiwari, B.R. Chakraborty, Sudhir Chandra
Rok vydání:	2013
Předmět:	Materials science Silicon Mechanical Engineering Analytical chemistry chemistry.chemical_element Sputter deposition Condensed Matter Physics Secondary ion mass spectrometry chemistry Mechanics of Materials Sputtering Boron oxide General Materials Science Wafer Thin film Boron
Zdroj:	Materials Science in Semiconductor Processing. 16:2013-2020
ISSN:	1369-8001
DOI:	10.1016/j.mssp.2013.07.031
Popis:	We report the preparation of thin film boron doped silicon dioxide (also called borosilicate–glass or BSG) by RF magnetron and its use as a boron diffusion source, especially for shallow junctions. For this purpose, a sputtering target of BSG was prepared through conventional solid state reaction route. Deposition rates of sputter deposited BSG film at different sputtering parameters were studied. The presence of boron in the deposited film was confirmed by hot probe and sheet resistance techniques on silicon wafer following a diffusion step. The structural evaluation of BSG thin film was performed using Fourier Transform Infrared Spectroscopy (FTIR). Secondary Ion Mass Spectroscopy (SIMS) was used to measure the concentration profile of boron in the BSG film. The effect of sputtering parameters on boron concentration in the deposited BSG film was also studied. A p–n junction diode was fabricated using BSG thin film as diffusion source of boron. The junction depth was measured to be in the range of 0.06–1.0 µm for different sputtering and diffusion parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4baf5d8649a88848edc6af5b055b9440 https://doi.org/10.1016/j.mssp.2013.07.031 Zobrazit plný text záznamu Full Text from ScienceDirect