Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications

Autor:	Ya-Hong Xie, Tatsuo Itoh, Keith A. Jenkins, H. K. Kim, Marc DeVincentis
Rok vydání:	2003
Předmět:	Materials science business.industry Coplanar waveguide General Physics and Astronomy Relative permittivity Dissipation factor Optoelectronics Dielectric loss Radio frequency Inductor Porous medium business Noise (electronics)
Zdroj:	Journal of Applied Physics. 93:4226-4231
ISSN:	1089-7550 0021-8979
Popis:	An isolation technology for radio frequency (rf) applications based on unoxidized porous Si (PS) is demonstrated. This study examines all the important issues pertinent to incorporating PS with Si very-large-scale integration (VLSI) technology, where PS is used as a semi-insulating material. Specifically, the issues on rf isolation performance of PS as a function of porosity [from coplanar waveguide (CPW) line measurements] and PS thickness (from on-chip inductors) and the stress generated from incorporating PS regions by anodization are discussed in detail. CPW line measurements show that the relative dielectric constant of PS films decreases from 9 to 3 with increasing porosity from 24% to 78%. PS is a very low loss material with loss tangent
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4baa0676d05db4fcf81b326d018c8bd5 https://doi.org/10.1063/1.1555700 Zobrazit plný text záznamu