Probing diagonal laser transitions in InGaAs/AlInAs/InP quantum cascade lasers
| Autor: | John W. Cockburn, J.S. Roberts, Andrey B. Krysa, J. P. Commin, M. R. Soulby, Dmitry G. Revin |
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| Rok vydání: | 2009 |
| Předmět: |
Chemistry
business.industry Far-infrared laser General Physics and Astronomy Laser pumping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser law.invention Semiconductor laser theory symbols.namesake Stark effect law Quantum dot laser symbols Optoelectronics Spectroscopy Quantum cascade laser business |
| Zdroj: | Journal of Applied Physics. 106:123106 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.3273479 |
| Popis: | We report on the midinfrared broadband transmission spectroscopy measurements of a λ∼4.3 μm strain compensated In0.64Ga0.36As/Al0.58In0.42As/InP quantum cascade laser. A detailed experimental analysis of the electronic distribution for bias values below the laser threshold is presented, highlighting the effects of the design with strongly diagonal laser transition. A marked voltage induced Stark shift is observed for the diagonal laser transition while the vertical intersubband transitions involved higher energy levels remained nearly bias independent. We also demonstrate the direct observation of intersubband transitions originating from the ground level of the injector miniband to the level confined above the AlInAs barriers. |
| Databáze: | OpenAIRE |
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