Method of improving enhance alignment quality in Double Patterning with Spacer process for 14–16nm FinFET

Autor:	Wuping Wang, Liang Zhang, Xianguo Dong, Yu Zhang, Albert Pang, Zhifeng Gan, Zhengkai Yang, Yang Wang, Zhibiao Mao, Xiaobo Guo, Runling Li, Chong Ermin
Rok vydání:	2015
Předmět:	Materials science Etching (microfabrication) media_common.quotation_subject Process (computing) Multiple patterning Nanotechnology Quality (business) Lithography Process conditions media_common
Zdroj:	2015 China Semiconductor Technology International Conference.
Popis:	It is well known that different alignment mark designs will have different responses to process conditions. An Alignment mark optimized for traditional process might not be suitable for DPS (Double Patterning with Spacer ) technology due to changes in lithography and etching process conditions[1].
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4ba2a8c618f8992e86831dded93a0853 https://doi.org/10.1109/cstic.2015.7153351 Zobrazit plný text záznamu