High Performance Analysis of Hetero-Junction In1−XGaXN/GaAs Solar Cell Using SCAPS
| Autor: | Malika Kandouci, Abdelkader Nassour, Abderrahmane Belghachi |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Band gap Doping chemistry.chemical_element Heterojunction 02 engineering and technology Nitride 021001 nanoscience & nanotechnology 01 natural sciences law.invention Semiconductor chemistry law 0103 physical sciences Solar cell Optoelectronics Gallium Thin film 0210 nano-technology business |
| Zdroj: | Advanced Control Engineering Methods in Electrical Engineering Systems ISBN: 9783319978154 |
| DOI: | 10.1007/978-3-319-97816-1_23 |
| Popis: | The group-III nitride based semiconductors have proved their potential application in optoelectronic devices. The effects of layers thickness and doping on the photovoltaic cell parameters in p-In1−xGaxN/i-GaAs/n-In1−xGaxN heterojunction solar cell have been investigated using solar cell capacitance simulator (SCAPS). The impacts of gallium (Ga) content, doping and thickness variation on the cell’s output parameters were extensively simulated. In this work, the p and n-In1−xGaxN band gap (Eg) are first defined and formulated as mathematical functions of gallium (Ga) content (“x”). Our numerical analysis highlights that the Eg value of 1.27 eV corresponding to x = 0.3 is optimal. Our results showed that the best structure must have a p-doped In0.7Ga0.3N layer, an active intrinsic GaAs layer, and n-doped In0.7Ga0.3N layer that have thicknesses of 0.15, 1.2 and 0.15 \( \upmu{\text{m}} \), respectively and doped with NA = 1016 cm−3 and ND = 1017 cm−3. Cells with these optimization results are found to give conversion efficiency of 25.88%. |
| Databáze: | OpenAIRE |
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