A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX

Autor:	Y. Campidelli, Pascal Chevalier, F. Pourchon, L. Depoyan, Alain Chantre, M. Buczko, G. Troillard, T. Lacave, Didier Celi, Daniel Gloria, G. Avenier, Christophe Gaquiere
Rok vydání:	2009
Předmět:	010302 applied physics Materials science business.industry Semiconductor materials Heterojunction bipolar transistor 020206 networking & telecommunications 02 engineering and technology BiCMOS 01 natural sciences 7. Clean energy Capacitance Silicon-germanium chemistry.chemical_compound chemistry CMOS 0103 physical sciences Double polysilicon 0202 electrical engineering electronic engineering information engineering Optoelectronics business
Zdroj:	2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
DOI:	10.1109/bipol.2009.5314250
Popis:	This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f MAX . The technological optimization strategy is discussed and electrical characteristics are presented. A record peak f MAX of 423 GHz (f T = 273 GHz) is demonstrated in SiGe:C HBT technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4ba1b59769254ffe4844d54ffbc94eff https://doi.org/10.1109/bipol.2009.5314250 Zobrazit plný text záznamu