| Autor: |
Jiang Hua, Jong-Kyu Cheon, H. Park, Sunghwan Kim, H.J. Kim, Gul Rooh |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 648:73-76 |
| ISSN: |
0168-9002 |
| Popis: |
We have successfully grown crack free BSO (Bi4Si3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed γ-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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