Next Generation Plasma Doping: First Results of a Heated E-chuck
| Autor: | Jha Praket P, Vijay D. Parkhe, Marcelynas Stacia, Yong Sun, Jingmei Liang, Deven Raj, A. Srivastava, Lee Jung Chan, Steven M. Anella |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Process development Doping 0211 other engineering and technologies 02 engineering and technology Plasma 01 natural sciences Ion source Semiconductor 021105 building & construction 0103 physical sciences Optoelectronics Wafer business DC bias |
| Zdroj: | 2018 22nd International Conference on Ion Implantation Technology (IIT). |
| DOI: | 10.1109/iit.2018.8807944 |
| Popis: | The plasma doping (PLAD) tool from Applied Materials Varian Semiconductor Equipment consists of an inductively coupled RF ion source and a backside helium-cooled platen with a pulsed negative DC bias to which the wafer is electrostatically clamped. Standard implant using PLAD is done at room temperature, or up to 70 C. As process development advances there are several applications that can benefit from heated implants. The PLAD chamber has now been modified to add this capability. Using production-proven expertise of the Applied Materials Center of Excellence in Heated e-chucks, two platens have been designed to fit the PLAD chamber covering two specific applications-oriented temperature ranges. These Aurora platens are described in this paper along with initial results on a variety of doping and precision materials modification (PMM) applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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