All-optical photonic switches using integrated inverted asymmetric Fabry-Perot modulators and heterojunction phototransistors
| Autor: | K. Kaviani, Ping Chen, Anupam Madhukar, Kezhong Hu, Li Chen |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Bistability business.industry Photonic integrated circuit Physics::Optics Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Optical switch Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Optical bistability chemistry.chemical_compound Optics chemistry Optoelectronics Electrical and Electronic Engineering Photonics business Indium gallium arsenide Fabry–Pérot interferometer |
| Zdroj: | IEEE Photonics Technology Letters. 4:263-266 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using "normally on" modulator pixels exhibit an output on-off ratio of 12:1 with an internal optical gain of 4 dB. The photonic switches using "normally off" modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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