Morphologies and photoluminescence properties of GaN‐based thin films grown on non‐single‐crystalline substrates
| Autor: | Yoshifumi Murakami, Shota Ishizaki, Yuichi Sato, Atomu Fujiwara, Shun Nakane |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Analytical chemistry chemistry.chemical_element Nanotechnology Gallium nitride 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences chemistry.chemical_compound chemistry 0103 physical sciences Graphite Gallium Thin film 0210 nano-technology Quartz Indium Molecular beam epitaxy |
| Zdroj: | physica status solidi c. 14:1600151 |
| ISSN: | 1610-1642 1862-6351 |
| Popis: | Morphologies and photoluminescence properties of gallium nitride-based thin films grown on non-single-crystalline substrates were investigated. The films were directly grown on quartz glass and amorphous-carbon-coated graphite substrates by a molecular beam epitaxy apparatus which has dual nitrogen plasma cells. Co-supplying of indium and gallium with simultaneous operation of the dual nitrogen plasma cells brought isolated and nano-pillar-shaped structures to the films. On the other hand, such structures were not obtained when the films were grown by the single plasma cell operation. Photoluminescence (PL) properties of the films greatly depended upon the morphologies. The intensities of the PL peaks emitted from the films which have such nano-pillar shaped structures were quite intense although the peak energies shifted to lower energy sides compared with those of the films grown by the single plasma cell operation. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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