Growth of ZnO thin film on graphene transferred Si (100) substrate
| Autor: | Aram Lee, Geonyeong Kim, Hyungtak Seo, Byungmin Ahn, In Sun Cho, Hak Ki Yu, Sun Jong Yoo |
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| Rok vydání: | 2016 |
| Předmět: |
Photoluminescence
Materials science Diffusion barrier Nanotechnology 02 engineering and technology Chemical vapor deposition 01 natural sciences Buffer (optical fiber) law.invention law 0103 physical sciences Materials Chemistry Thin film High electron 010302 applied physics business.industry Graphene Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Polymer coating Optoelectronics 0210 nano-technology business |
| Zdroj: | Thin Solid Films. 619:68-72 |
| ISSN: | 0040-6090 |
| Popis: | Growth of ZnO thin film on conventional Si (100) substrate using atomically thin graphene as a buffer layer has been studied. The graphene buffer layer was synthesized by Cu-catalyzed chemical vapor deposition method and transferred on Si (100) using well-established polymer coating and Cu etching techniques. The ZnO film with (0002) preferred orientation was developed on graphene buffered Si (100) compared to ZnO film grown on Si (100) directly, which showed random orientation distribution. The graphene layer acts as not only lattice matching with ZnO but also diffusion barrier between ZnO and Si substrate, resulting in high electron mobility and photoluminescence intensity of ZnO film. |
| Databáze: | OpenAIRE |
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