Deposition of HfO2 Films by Liquid Injection MOCVD Using a New Monomeric Alkoxide Precursor, [Hf(dmop)4]
| Autor: | Richard J. Potter, Jamie F. Bickley, Paul R. Chalker, Stephen Taylor, Ruairi O'Kane, Lesley M. Smith, Helen C. Aspinall, Yim Fun Loo, Anthony C. Jones |
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| Rok vydání: | 2005 |
| Předmět: |
Auger electron spectroscopy
Process Chemistry and Technology Inorganic chemistry Analytical chemistry Surfaces and Interfaces General Chemistry law.invention Amorphous solid chemistry.chemical_compound chemistry law Alkoxide Texture (crystalline) Thin film Crystallization Hafnium dioxide Monoclinic crystal system |
| Zdroj: | Chemical Vapor Deposition. 11:299-305 |
| ISSN: | 1521-3862 0948-1907 |
| DOI: | 10.1002/cvde.200506384 |
| Popis: | Thin films of HiO 2 have been deposited by liquid injection metal-organic (MO)CVD using the new alkoxide precursor [Hf(dmop) 4 ] (dmop = 2-(4,4-dimethyloxazolinyl)-propanolate). The crystal structure of [Hf(dmop) 4 ] has been determined, and shows it to be a six-coordinate monomeric complex. [Hf(dmop) 4 ] is volatile and is significantly less reactive to air and moisture than simple Hf alkoxide complexes such as [Hf(O'Bu) 2 ]. The HfO 2 thin films were deposited over substrate temperatures ranging from 350 °C to 650 °C. Analysis by X-ray diffraction (XRD) shows that the films are amorphous at deposition temperatures of 400 °C and below. At substrate temperatures above 450 °C. the films adopt a monoclinic (α-HfO 2 ) phase with a fiber texture dependent upon growth temperature. Analysis by Auger electron spectroscopy (AES) shows that the films are non-stoichiometric and contain residual carbon (2.1 - 11.6 at.-%) and nitrogen (0.4 - 1.9 at.-%). |
| Databáze: | OpenAIRE |
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