High efficiency GaAs Schottky-barrier gate f.e.t. oscillator

Autor:	J.F. Sautereau, J. Graffeuil, P. Rossel, K. Tantrarongroj
Rok vydání:	1980
Předmět:	Materials science business.industry Schottky barrier Energy conversion efficiency Schottky diode Gallium arsenide chemistry.chemical_compound Vackář oscillator chemistry Optoelectronics Field-effect transistor Transient response Electrical and Electronic Engineering business Microwave
Zdroj:	Electronics Letters. 16:490
ISSN:	0013-5194
DOI:	10.1049/el:19800342
Popis:	A high efficiency high p.p.d. GaAs f.e.t. oscillator was developed. An output power of 63 mW with an efficiency of 39.7% and a p.p.d. of 0.21 mW/?m was easily produced at 9.3 GHz using a HP FET 1101 A-HPAC 100 A. The design of this oscillator was effected using a large signal method by means of a time-domain analysis program IMAG III, which computes the transient response of a nonlinear f.e.t. network.
Databáze:	OpenAIRE
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