| Autor: |
Daniel J. Lichtenwalner, Jae Hyung Park, Steven Rogers, Hemant Dixit, Andreas Scholtze, Simon Bubel, Sei Hyung Ryu |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. 1089:3-7 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/p-w8i0hf |
| Popis: |
High-quality, low resistivity n-type (nitrogen-doped) single crystal 4H-SiC wafers are needed to grow high-quality epitaxial SiC layers used for the active blocking layers of high-voltage power devices. The resistance of the substrate constitutes a portion of the device resistance for vertical devices, and therefore the SiC substrate properties must be fully characterized. In this study we report the 4H-SiC substrate electrical properties as a function of temperature measured using van der Pauw structures to measure resistivity from 4-point measurements, and carrier concentration and mobility from Hall effect measurements. We find that the SiC substrate resistivity has a minimum around 425K for typical substrate doping levels, due to a competition between the decreasing mobility and increasing carrier concentration with increasing temperature. The measured energy levels of the N donor (hexagonal / cubic sites) are extracted for a 5.8×1018 cm-3 N-doped substrate, and found to be 15 meV and 105 meV, respectively. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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