Impact of Flash Lamp Annealing on 20-nm-Gate-Length Metal Oxide Silicon Field Effect Transistors

Autor:	Takaharu Itani, Kyoichi Suguro, Kazumi Nishinohara, Takayuki Ito
Rok vydání:	2003
Předmět:	Flash-lamp Materials science Fabrication Physics and Astronomy (miscellaneous) Dopant Annealing (metallurgy) business.industry General Engineering General Physics and Astronomy Electrical resistivity and conductivity MOSFET Optoelectronics Field-effect transistor business Sheet resistance
Zdroj:	Japanese Journal of Applied Physics. 42:L1126-L1129
ISSN:	0021-4922
DOI:	10.1143/jjap.42.l1126
Popis:	The advantages of using the new flash lamp annealing (FLA) technology and a shallow junction with the consequent low sheet resistivity for metal oxide silicon field effect transistors (MOSFETs) with gate length (L) of 20 nm were clarified by computer simulations based on MOSFETs fabricated with FLA for the first time. In contrast to spike annealing, the shallow junction realized by applying FLA to pMOSFET fabrication enabled the suppression of |Ioff| with a low channel surface dopant concentration, thus providing a higher mobility value and a higher drive current. FLA is promising for improving the performance of sub-30-nm-gate-length MOSFETs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4b75d28753651e67099250dc1856d6d8 https://doi.org/10.1143/jjap.42.l1126 Zobrazit plný text záznamu