Probing the Evolution of Electrically Active Defects in Doped Ferroelectric HfO2 during Wake-Up and Fatigue

Autor:	Tian-Li Wu, P. Van Marcke, Y.-H. Chen, G. Van den bosch, S. R. C. McMitchell, P. van der Heide, B. Kaczer, Paola Favia, Umberto Celano, Albert Minj, Nicolo Ronchi, J. Van Houdt, K. Banerjee
Rok vydání:	2020
Předmět:	Kelvin probe force microscope Materials science Silicon business.industry Doping chemistry.chemical_element Ferroelectricity chemistry Electrode Microscopy Optoelectronics business Electrical conductor Nanoscopic scale
Zdroj:	2020 IEEE Symposium on VLSI Technology.
Popis:	We correlate the concentration and configuration of electrical defects in ferroelectric Si -doped HfO 2 (FE- HfO 2 ) with the electrical device performance during wake-up and fatigue regimes. To this end, we combine time-to-breakdown (TDDB), Kelvin probe force microscopy (KPFM), conductive atomic force microcopy (C-AFM) and Scalpel SPM, probing for the first time, the nanoscopic material variations as a function of device's field cycling behavior.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4b7157586db80d256c462981f93557aa https://doi.org/10.1109/vlsitechnology18217.2020.9265098 Zobrazit plný text záznamu