Gallium Phosphide Solar Cell Structures with Improved Quantum Efficiencies
| Autor: | Ryan Bunk, Hui-Ying Siao, Jerry M. Woodall |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
chemistry.chemical_element 02 engineering and technology Epitaxy 01 natural sciences law.invention chemistry.chemical_compound Etching (microfabrication) law 0103 physical sciences Gallium phosphide Solar cell Materials Chemistry Electrical and Electronic Engineering Gallium Diode 010302 applied physics business.industry Schottky diode 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Active layer chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of Electronic Materials. 49:3435-3440 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-019-07848-6 |
| Popis: | Gallium phosphide (GaP) solar cell structures with improved quantum efficiencies were realized using a modified liquid phase epitaxy (LPE) technique and diodes formed using semi-transparent Schottky contacts. The improvement is due to the addition of a small amount of aluminum to the gallium and phosphorus containing LPE melt. The Al reduces the background concentration of oxygen in the melt, which is known to produce deep trap states in GaP. Additionally, it was found that by depositing an aluminum (Al)-rich AlGaP layer on top of the active GaP and then selectively etching it away, the surface morphology of the active layer was significantly improved. Thus, the modified LPE technique eliminates the major problem of meniscus lines associated with the standard LPE method. |
| Databáze: | OpenAIRE |
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