Electrical resistivity of thin films of potassium at 100°K

Autor: G.C. Danielson, D.G. Worden
Rok vydání: 1958
Předmět:
Zdroj: Journal of Physics and Chemistry of Solids. 6:89-95
ISSN: 0022-3697
Popis: The electrical resistivity of thin potassium films at 100°K has been measured as a function of thickness in the range 148–1600 A. The experimental results are in excellent agreement with Fuchs's theoretical predictions in the range 500–1600 A and show that the scattering of the electrons at the film surfaces is completely diffuse. Comparison of experimental and theoretical curves gives a bulk resistivity parameter of 1·85 μΩ-cm, a mean free path of 1180 A, and an electron to atomic density ratio of 1·0. The films were deposited on a Pyrex substrate from a beam of potassium vapor in a vacuum chamber which had a pressure less than 5 × 10−8 mm Hg. The film thickness, in each case, was computed from a known beam intensity, exposure time, and film density. A surface ionization detector was used to calibrate the beam intensity (J1) as a function of effusion oven temperature (T0). The linear plot of log (J1T012) versus T0−1 gave a heat of sublimation for potassium at 450°K of 21·1 kcalmole, in good agreement with Brewer's value of 21·4 kcalmole within our experimental error.
Databáze: OpenAIRE