An Epitaxy Transfer Process for Heterogeneous Integration of Submillimeter-Wave GaAs Schottky Diodes on Silicon Using SU-8
| Autor: | Matthew F. Bauwens, Naser Alijabbari, Robert M. Weikle, N. Scott Barker, Michael E. Cyberey, Linli Xie, Arthur W. Lichtenberger, Souheil Nadri |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Schottky barrier Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology Metal–semiconductor junction 01 natural sciences Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Parasitic capacitance 0103 physical sciences Optoelectronics Wafer Electrical and Electronic Engineering 0210 nano-technology business Ohmic contact Diode |
| Zdroj: | IEEE Electron Device Letters. 38:1516-1519 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2017.2756920 |
| Popis: | This letter describes a new approach for fabricating quasi-vertical submillimeter-wave GaAs Schottky diodes heterogeneously integrated to high-resistivity silicon substrates. The new method is robust and eliminates previous processing steps that were prone to result in wafer fracture and delamination. Diodes fabricated with the new process and measured in the 325–500 GHz range using on-wafer RF probes exhibits low parasitic capacitance and series resistance, achieving device characteristics comparable to the prior state-of-the-art submillimeter-wave diodes. |
| Databáze: | OpenAIRE |
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