Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method

Autor:	Blanka Magyari-Köpe, J.-Y. Jason Lin, Hugo Bender, O. Richard, Johan Dekoster, Dennis Lin, Robert Chen, Yoshio Nishi, Federica Gencarelli, Suyog Gupta, Bin Yang, Benjamin Vincent, Matty Caymax, Krishna C. Saraswat
Rok vydání:	2012
Předmět:	Materials science Ozone Fabrication Passivation business.industry Chemical vapor deposition chemistry.chemical_compound CMOS chemistry MOSFET Thermal Electronic engineering Optoelectronics business Communication channel
Zdroj:	2012 International Electron Devices Meeting.
DOI:	10.1109/iedm.2012.6479052
Popis:	We present a detailed theoretical analysis to motivate GeSn for CMOS logic. High quality GeSn films have been obtained on Ge-on-Si using a CVD process. A novel surface passivation scheme is presented to achieve record low trap densities at high-ĸ/GeSn interface. Using the novel surface passivation method, combined with a low thermal budget device fabrication process, n-channel MOSFETs on GeSn with channel Sn content as high as 8.5% have been demonstrated for the first time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4b32b95bb4ff638caba9ce1bf9dcf708 https://doi.org/10.1109/iedm.2012.6479052 Zobrazit plný text záznamu