Intervalley energy separation in the conduction band of InAs1−x Bi x determined by terahertz emission spectroscopy

Autor:	Jan Devenson, Karolis Stašys, Ričardas Norkus, Sandra Stanionytė, Arūnas Krotkus
Rok vydání:	2023
Předmět:	General Engineering General Physics and Astronomy
Zdroj:	Japanese Journal of Applied Physics. 62:040903
ISSN:	1347-4065 0021-4922
DOI:	10.35848/1347-4065/acc777
Popis:	InAsBi layers with different bismuth content were grown on InAs substrates by solid source MBE. The amount of bismuth incorporated in the layers was estimated using X-ray diffraction measurements. The relaxation degree of the grown crystalline layers was evaluated using reciprocal space map analysis. The intervalley energy separation in the conduction band of InAsBi was studied by Terahertz Excitation Spectroscopy. It has been found that this separation slightly decreases with increasing Bi content. In the studied samples with Bi content varying from 2.7% to 4.5% the Γ-L separation shifts down to about 0.9 eV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4b2e4197656289f74d5cd75704bf9f5e https://doi.org/10.35848/1347-4065/acc777 Zobrazit plný text záznamu