Circuit model of uni-traveling carrier photodiode with high power and enhanced bandwidth technique
| Autor: | Senjuti Khanra, Abhirup Das Barman |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Photocurrent
Frequency response Materials science business.industry Linearity Atomic and Molecular Physics and Optics Cutoff frequency Electronic Optical and Magnetic Materials Photodiode law.invention Inductance law Electrical network Optoelectronics Equivalent circuit Electrical and Electronic Engineering business |
| Zdroj: | Optical and Quantum Electronics. 47:1397-1405 |
| ISSN: | 1572-817X 0306-8919 |
| DOI: | 10.1007/s11082-014-0094-x |
| Popis: | An electrical equivalent circuit model of InGaAs/InP uni-travelling carrier photodiode (UTC-PD) is presented. The model is suitable to be built on any electrical circuit simulator to optimize the design parameters of the device. Its performance in terms of bandwidth, linearity, third order inter-modulation distortion and output photo current are investigated. Simulation techniques to measure inter-modulation distortion products and linearity are given in detail. The result obtained by the modeling technique is validated through a comparison with the reported experimental results. It is shown that 3 dB cutoff frequency and output photocurrent can be substantially improved by inserting a small inductance in series with the load together with choosing an optimum absorption layer width in UTC-PD. This technique does not sacrifice the device linearity to a large extent. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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