Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs
| Autor: | Xiang Gao, Niklas Rorsman, Olle Axelsson, Shiping Guo, Martin Fagerlind, Lester F. Eastman, Jonathan Felbinger, William J. Schaff |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Fabrication Passivation business.industry Transconductance Wide-bandgap semiconductor Gallium nitride High-electron-mobility transistor Noise figure Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Optoelectronics Electrical and Electronic Engineering business Ohmic contact |
| Zdroj: | IEEE Electron Device Letters. 32:889-891 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2011.2143384 |
| Popis: | The growth, fabrication, and performance of Al0.5Ga0.5 N/AlN/GaN high-electron-mobility transistors (HEMTs) with a total barrier thickness of 7 nm are reported. An optimized surface passivation and an ohmic recess etch yield HEMTs exhibiting 0.72 S/mm peak extrinsic dc transconductance at a current density of 0.47 A/mm. Devices with a gate length of 90 nm achieve 78 GHz unity-current-gain frequency and up to 166 GHz maximum frequency of oscillation. The minimum noise figure at 10 GHz is 0.52 dB with an associated gain of 9.5 dB. |
| Databáze: | OpenAIRE |
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