Room-temperature quantum interference in an asymmetric triple-barrier resonant-tunnelling diode
| Autor: | Y Shiraki, T Strutz |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Condensed matter physics
Chemistry Transistor Resonant-tunneling diode Quantum oscillations Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Amplitude law Band diagram Materials Chemistry Tunnel diode Electrical and Electronic Engineering Quantum tunnelling Voltage |
| Zdroj: | Semiconductor Science and Technology. 11:103-106 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/11/1/022 |
| Popis: | At room temperature strong oscillatory structure was observed in the current - voltage characteristics of a triple-barrier structure with a band diagram similar to hot-electron resonant tunnelling transistors. From the dependence of these oscillations on the width of the drift region, it is demonstrated that they are due to quantum interference in the drift region. Their amplitude decreases with decreasing temperature. This is an unusual dependence on temperature not observed in other resonant-tunnelling structures. |
| Databáze: | OpenAIRE |
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