Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile

Autor:	Wolfgang Skorupa, Reinhard Kögler, A.B. Danilin, R.A. Yankov, Matthias Posselt
Rok vydání:	1999
Předmět:	Nuclear and High Energy Physics Ion implantation Materials science Annealing (metallurgy) Getter Irradiation Instrumentation Molecular physics Ion
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 147:96-100
ISSN:	0168-583X
DOI:	10.1016/s0168-583x(98)00534-5
Popis:	Damage has been observed in MeV-ion-implanted Si away from the maximum of the nuclear energy deposition profile, mainly around the half of the projected ion range, RP/2. Cu gettering has been used for the detection of irradiation defects which are formed during annealing at temperatures between 700°C and 1000°C. This damage is primarily created by the implanted ions on their trajectory and consists of intrinsic defects remaining so small that they have not yet been resolved. These defects undergo a defect evolution during annealing which results in a decrease of the width of the damage layer with increasing temperature and prolonged time of the annealing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4b08afdade4cb5ae296dd846cfe52322 https://doi.org/10.1016/s0168-583x(98)00534-5 Zobrazit plný text záznamu Full Text from ScienceDirect