| Autor: |
I. E. Titkov, V.L. Zerova, A.V. Shturbin, V.A. Shalygyn |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505). |
| DOI: |
10.1109/cleoe.2000.910149 |
| Popis: |
Summary form only. At present the better part of coordinate-sensitive photodetectors is based on longitudinal photo-voltage effect in p-n junction. The linear range of their sensitivity via coordinate of illuminated region is limited by the diffusion length of non-equilibrium carriers for the semiconductor sensitive cell and does not exceed 2 mm. We present a new coordinate-sensitive photodetector design. Our device is based on detecting a magnetic part of the electromagnetic radiation from the semiconductor surface illuminated by interband light. The electromagnetic radiation is produced by currents of non-equilibrium carriers moving outside the region of the light excitation and separated by a surface barrier. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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