A study of proton generation in Si/SiO2/Si structures
| Autor: | V. Girault, William L. Warren, Karel Vanheusden, R. A. B. Devine |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Hydrogen
Proton Annealing (metallurgy) Oxide Analytical chemistry chemistry.chemical_element Mineralogy Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Electrical and Electronic Engineering Forming gas |
| Zdroj: | Microelectronic Engineering. 48:167-170 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(99)00363-9 |
| Popis: | The results of a study of the proton generation reaction in Si/SiO 2 /Si structures during forming gas (N 2 , H 2 ) annealing are presented. The main objective of the experiment was to determine the type of the reaction, i.e. to ascertain whether the oxide surface or oxide volume is predominant. We conclude that the oxide surface related generation mechanism appears to be the most important. At the same time as protons are generated, we observed a change in the top Si layer resistance. This may be associated with the reaction with hydrogen during the forming gas anneal. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect