Electron mobility model for silicon carbide inversion layers
| Autor: | Yu Anne Zeng, Marvin H. White |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Electron mobility
Materials science Condensed matter physics Transconductance Induced high electron mobility transistor Wide-bandgap semiconductor Inversion (meteorology) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Computer Science::Other chemistry.chemical_compound chemistry MOSFET Surface roughness Silicon carbide |
| Zdroj: | International Semiconductor Device Research Symposium, 2003. |
| Popis: | This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFET was fabricated on an aluminium-implanted surface and the transfer characteristics are analysed, then the corresponding transconductance curves are compared. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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