Properties of Hydrogenated Amorphous Silicon-Germanium Alloys Deposited by Dual Target Reactive Magnetron Sputtering

Autor: Samuel J. Levang, James R. Doyle
Rok vydání: 2012
Předmět:
Zdroj: MRS Proceedings. 1426:301-306
ISSN: 1946-4274
0272-9172
DOI: 10.1557/opl.2012.1093
Popis: Hydrogenated amorphous silicon-germanium alloy thin films (a-Si1-xGex:H) were deposited using reactive magnetron sputtering. Dual targets of silicon and germanium were sputtered in an argon + hydrogen atmosphere using rf excitation. Films with x = 0.4 were deposited as a function of substrate temperature and hydrogen partial pressure, and were evaluated by dark and photoconductivity, infrared absorption, and optical transmission. Photosensitivity reached a maximum value of about 5000 between 150 and 200 °C. Using the stretching modes in the region of 2000 cm-1, the hydrogen bonding was characterized in terms of the preferential attachment ratio (PA), which represents the ratio of H bonded to silicon to that bonded to germanium. The PA shows a systematic increase with increasing temperature, independent of hydrogen partial pressure. The interplay between thermodynamic and kinetics effects in determining PA and film quality will be discussed.
Databáze: OpenAIRE
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