Phase Transition in Heavily Doped Gallium Arsenide
| Autor: | V. V. Prudnikov, N. A. Semikolenova, I. A. Prudnikova |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Phase transition
Photoluminescence Absorption spectroscopy Condensed matter physics Condensed Matter::Other Chemistry Inorganic chemistry Doping Infrared spectroscopy Condensed Matter Physics Free carrier Electronic Optical and Magnetic Materials Gallium arsenide Thermodynamic model Condensed Matter::Materials Science chemistry.chemical_compound Condensed Matter::Superconductivity Condensed Matter::Strongly Correlated Electrons |
| Zdroj: | physica status solidi (b). 181:87-96 |
| ISSN: | 1521-3951 0370-1972 |
| DOI: | 10.1002/pssb.2221810110 |
| Popis: | The results of investigation of GaAs single crystals heavily doped by group VI elements are considered. The doping effects are studied by methods of free carrier infrared absorption, photoluminescence, ultrasonic, and calorimetric methods. For the explanation of the observed peculiarities in doped gallium arsenide the thermodynamic model of phase transitions is proposed using the properties of complex formation in this semiconducting compound. [Russian Text Ignored.] |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text