Investigation of Superfilling and Electrical Characteristics in Low-Impurity-Incorporated Cu Metallization

Autor:	Shih-Chieh Chang, Bau-Tong Dai, Ming-Shiann Feng, Jia-Min Shieh
Rok vydání:	2002
Předmět:	Materials science Physics and Astronomy (miscellaneous) Metallurgy General Engineering General Physics and Astronomy Activation energy Electrolyte Grain growth Electrical resistivity and conductivity Impurity Thermal Composite material Polarization (electrochemistry) Electroplating
Zdroj:	Japanese Journal of Applied Physics. 41:5104-5107
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.41.5104
Popis:	Complete filling of 0.13-µm vias and deposition of Cu with a low resistivity of about 2.3 µΩcm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400°C for 30 s, the resistivity was further reduced to ~1.9 µΩcm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4add94c8ef46adcf50344f2d6e190691 https://doi.org/10.1143/jjap.41.5104 Zobrazit plný text záznamu