High Polarization and Low-Repulsion ${\rm HfO}_{2}$ Thin Film for Alkali Metal Ion Detections by Plasma System With a Complementary Filter
| Autor: | Yi-Ting Lin, Chi-Hsien Huang, Chien Chou, Kuan-I Ho, Chu-Fa Chan, I.-Shun Wang, Chao-Sung Lai |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | IEEE Sensors Journal. 13:2459-2465 |
| ISSN: | 2379-9153 1530-437X |
| DOI: | 10.1109/jsen.2013.2256123 |
| Popis: | A new plasma system with a complementary filter for low-damage carbon tetrafluoride $({\rm CF}_{4})$ plasma treatment is proposed to incorporate fluorine (F) atoms into a hafnium dioxide $({\rm HfO}_{2})$ thin-film sensing membrane in an electrolyte-insulator-semiconductor structure for alkali metal ion ( ${\rm Na}^{+}$ and ${\rm K}^{+}$ ) detection. Hf 4f and F 1s X-ray photoelectron spectra confirmed the incorporation of fluorine (F) atoms into the ${\rm HfO}_{2}$ sensing membrane after low-damage ${\rm CF}_{4}$ plasma treatment. As the duration of the plasma treatment is increased, the F 1s intensity and the amount of Hf–F bonds increased, and the corresponding ${\rm Na}^{+}$ and ${\rm K}^{+}$ sensitivities drastically increased (pNa: 121.6 mV/pNa; pK: 98.1 mV/pK). The super-Nernst phenomenon is attributed not only to the formation of higher dipole property between Hf and F than that between Hf and O but also to the reduction of plasma bombardment and UV irradiation, which damage the ${\rm HfO}_{2}$ sensing membrane. A positive charge model is proposed to explain the improvements by fluorine incorporation with complementary filter. |
| Databáze: | OpenAIRE |
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