A 512×576 65-nm CMOS ISFET sensor for food safety screening with 123.8 mV/pH sensitivity and 0.01 pH resolution
| Autor: | Mei Yan, Tran Chien Dang, Jui-Cheng Huang, Cheng-Hsiang Hsieh, Yu Jiang, Tung-Tsun Chen, Xu Liu, Hao Yu |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Subthreshold conduction business.industry Amplifier 020208 electrical & electronic engineering Electrical engineering 02 engineering and technology 01 natural sciences Dot pitch law.invention Capacitor CMOS law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Field-effect transistor ISFET business Sensitivity (electronics) |
| Zdroj: | 2016 IEEE Symposium on VLSI Technology. |
| DOI: | 10.1109/vlsit.2016.7573440 |
| Popis: | Internet-of-things (IoTs) need a common CMOS technology platform to build multi-modal sensor on chip. This paper shows a CMOS-based ion-sensitive field effect transistor (ISFET) pH sensor for food safety screening. A low-power high-gain subthreshold trans-impedance amplifier is integrated with an integration capacitor to form a readout scheme by pH-to-time-to-voltage conversion (pH-TVC), which greatly improves sensitivity of a single ISFET pixel. Fabricated in standard CMOS 65-nm process with the smallest pixel pitch of 4.4 µm, a 123.8 mV/pH sensitivity is achieved compared to traditional source-follower readout with a 6.3 mV/pH sensitivity. E. coli experiment further shows its great potential to monitor hygiene condition for food safety with a 0.01 pH resolution. |
| Databáze: | OpenAIRE |
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