| Autor: |
Andrea Cathelin, Hani Sherry, Andreas Kaiser, Janusz Grzyb, Ullrich R. Pfeiffer |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). |
| DOI: |
10.1109/irmmw-thz.2013.6665522 |
| Popis: |
This paper reports on the impact of antenna impedance frequency characteristics on a broadband low-NEP operation of THz MOSFET direct detectors. New Si-lens integrated high-impedance on-chip ring antennas were developed based on a systematic co-design procedure with MOSFET device. They allowed achieving the world record values both in terms of responsivity and noise equivalent power for detector arrays implemented in a bulk 65 nm CMOS technology. Only few representative design examples out of the complete test array are presented. A peak optical voltage responsivity (Rv) of 2200 and a minimum noise equivalent power (NEP) of 14 pW/√Hz at 200 Hz chopping frequency were measured at 724 GHz for one of the detectors, whereas some other demonstrated broadband operation with an optical NEP below 50 pW/√Hz for at least 650-970 GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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