Selective dry etching of UV-nanoimprinted resin passivation masks for area selective atomic layer deposition of aluminum oxide
| Autor: | Masaru Nakagawa, Shunya Ito, Chiaki Miyajima |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Passivation Process Chemistry and Technology technology industry and agriculture Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Atomic layer deposition stomatognathic system Chemical engineering Materials Chemistry Dry etching Electrical and Electronic Engineering Reactive-ion etching Ion milling machine Instrumentation Layer (electronics) |
| Zdroj: | Journal of Vacuum Science & Technology B. 39:052804 |
| ISSN: | 2166-2754 2166-2746 |
| Popis: | To demonstrate area selective atomic layer deposition (ALD) using UV-nanoimprinted resin patterns as physical passivation masks, we investigated the removal of UV-cured resin films subjected to sequential mutual doses of trimethylaluminum (TMA) and H2O by using dry etching procedures. On the basis of the removal of a residual layer characteristic from imprint resin patterns by anisotropic oxygen reactive ion etching (O2 RIE), oxidatively etched UV-cured films were modified with TMA and H2O in an ALD-like cyclic manner. Atomic force microscopy and time-of-flight secondary ion mass spectrometry [time-of-flight secondary ion mass spectrometry (TOF-SIMS)] analysis suggested that the combination of physical Ar ion milling and subsequent chemical O2 RIE enabled the elimination of oxidized UV-cured resin masks modified with 5-cycle TMA doses. By contrast, Ar ion milling or O2 RIE left organic or inorganic residues on silicon surfaces, respectively. A TMA-modified hybridized resin layer was etched by physical Ar ion milling; subsequently, the organic residual resin layer was removed by chemical O2 RIE in the case of 5-cycle modification with TMA. The mapping image of Al+ visualized by TOF-SIMS suggested that line patterns of aluminum oxide were left selectively on unmasked silicon substrate surfaces by site-selective dry etching of TMA-modified imprint resin passivation masks with 500 nm linewidth. |
| Databáze: | OpenAIRE |
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