Oxidation of N+ implanted silicon: optical and structural properties

Autor:	S. Alexandrova, A. Szekeres, T. Chevolleau
Rok vydání:	2002
Předmět:	inorganic chemicals Materials science Silicon oxynitride Hydrogen Silicon technology industry and agriculture Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Nitrogen Surfaces Coatings and Films chemistry.chemical_compound Ion implantation X-ray photoelectron spectroscopy chemistry Ellipsometry Materials Chemistry Thin film
Zdroj:	Surface and Coatings Technology. :281-284
ISSN:	0257-8972
DOI:	10.1016/s0257-8972(01)01607-3
Popis:	The optical and structural properties of oxidized silicon wafers, previously implanted with N + ions at different doses, were investigated. A decrease in oxidation rate is observed as N + ion dose increases due to the effect of incorporated nitrogen. Higher refractive index of the grown layer, deduced from spectroscopic ellipsometry, indicates the formation of silicon oxynitride thin films. X-Ray photoelectron spectroscopy shows a small amount of nitrogen in the oxidized Si region, where the nitrogen atoms are mainly bonded to silicon. The SiO vibration band at 1096 cm −1 , measured by FTIR, is at the same position as that at oxidation of unimplanted silicon. No bands connected to NH and SiH vibration bonds are observed indicating low content of hydrogen in the silicon oxynitride film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4abd3a3b3c4a0cbcaa99a6fa65e7e6fe https://doi.org/10.1016/s0257-8972(01)01607-3 Zobrazit plný text záznamu Full Text from ScienceDirect