In situ hydrogen plasma treatment for improved transport of (400) oriented polycrystalline silicon films
| Autor: | K Nakahata, Kazuyoshi Ro, Isamu Shimizu, Atsushi Suemasu, C.M Fortmann, Toshio Kamiya |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Renewable Energy Sustainability and the Environment Photoconductivity Analytical chemistry chemistry.chemical_element Plasma engineering.material Conductivity Surfaces Coatings and Films Electronic Optical and Magnetic Materials Polycrystalline silicon chemistry Plasma-enhanced chemical vapor deposition engineering Grain boundary Thin film |
| Zdroj: | Solar Energy Materials and Solar Cells. 66:313-320 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/s0927-0248(00)00189-6 |
| Popis: | Polycrystalline silicon (poly-Si) films were deposited on glass by very high-frequency (100 MHz) plasma enhanced chemical vapor deposition from a gaseous mixture of SiF4 and H2 with small amounts of SiH4. (2 2 0) oriented films prepared at small SiF4/H2 ratios ( 7.2×10 −4 S/cm . This conductivity exhibited a T−1/4 behavior, suggesting a high defect density at the grain boundaries. It was found that in situ hydrogen plasma treatment successfully produced (4 0 0) oriented poly-Si with a reasonably low σd of 4.5×10 −7 S/cm and a good photoconductivity of 1.3×10 −4 S/cm . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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