[Zr(NEtMe)2(guan-NEtMe)2] as a Novel Atomic Layer Deposition Precursor: ZrO2 Film Growth and Mechanistic Studies
| Autor: | Manish Banerjee, Marco Gavagnin, Yoann Tomczak, Heinz D. Wanzenboeck, Timothee Blanquart, Mikko Ritala, Esa Puukilainen, Anjana Devi, Wilhelmus M. M. Kessels, Susanne Hoffmann-Eifert, Nabeel Aslam, Markku Leskelä, Jaakko Niinistö, V Valentino Longo |
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| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
Ozone Materials science General Chemical Engineering Inorganic chemistry Analytical chemistry chemistry.chemical_element 02 engineering and technology General Chemistry Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Nitrogen Oxygen Atomic layer deposition chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy 13. Climate action 0103 physical sciences Materials Chemistry 0210 nano-technology Carbon High-κ dielectric |
| Zdroj: | Chemistry of Materials. 25:3088-3095 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/cm401279v |
| Popis: | [Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen source, the growth rate remained constant over a wide temperature range, whereas with ozone the growth rate increased steadily with deposition temperature. Both ALD processes were successfully developed: the characteristic self-limiting ALD growth mode was confirmed at 300 °C. The growth rates were exceptionally high, 0.9 and 1.15 A/cycle with water and ozone, respectively. X-ray diffraction (XRD) indicated that the films were deposited in the high-permittivity cubic phase, even when grown at temperatures as low as 250 °C. Compositional analysis performed by means of X-ray photoelectron spectroscopy (XPS) demonstrated low carbon and nitrogen contamination ( |
| Databáze: | OpenAIRE |
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